Journal article 1482 views
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
Natalia Seoane,
Guillermo Indalecio,
Enrique Comesana,
Manuel Aldegunde,
Antonio J. Garcia-Loureiro,
Karol Kalna 
IEEE Transactions on Electron Devices, Volume: 61, Issue: 2, Pages: 466 - 472
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1109/TED.2013.2294213
Abstract
Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
| Published in: | IEEE Transactions on Electron Devices |
|---|---|
| Published: |
2014
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa21848 |
| College: |
Faculty of Science and Engineering |
|---|---|
| Issue: |
2 |
| Start Page: |
466 |
| End Page: |
472 |