Conference Paper/Proceeding/Abstract 1264 views
TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT
S Faramehr,
P Igic,
K Kalna,
Karol Kalna 
Pages: 11 - 14
Swansea University Author:
Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/asdam.2012.6418566
Abstract
TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT
| Published: |
2012
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa14750 |
| College: |
Faculty of Science and Engineering |
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| Start Page: |
11 |
| End Page: |
14 |